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nanya 512MB DDR2 sodimm notebook RAM modul NT512T64UH8A1FN-37B 512MB 2Rx16 PC2-4200S-444-12-A2

nanya 512MB DDR2 sodimm notebook RAM modul NT512T64UH8A1FN-37B 512MB 2Rx16 PC2-4200S-444-12-A2
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nanya 512MB DDR2 sodimm notebook RAM modul NT512T64UH8A1FN-37B 512MB 2Rx16 PC2-4200S-444-12-A2
  • nanya 512MB DDR2 sodimm notebook RAM modul NT512T64UH8A1FN-37B 512MB 2Rx16 PC2-4200S-444-12-A2

    HWiNFO32 Version 5.80-3400

    Memory --------------------------------------------------------------------

    [General information]
    Total Memory Size: 1 GByte
    Total Memory Size [MB]: 1024
    [Current Performance Settings]
    Current Memory Clock: 159.6 MHz
    Current Timing (tCAS-tRCD-tRP-tRAS): 4-4-4-12
    Memory Runs At: Single-Channel
    Command Rate: 1T
    Write to Read Delay (tWR_RD) Same Rank (tWTR): 2T
    Write to Precharge Delay (tWTP): 15T
    Write Recovery Time (tWR): 4T
    Row Cycle Time (tRC): 17T
    Four Activate Window (tFAW): 10T

    Row: 0 - 512 MB PC2-4200 DDR2-SDRAM Nanya Technology NT512T64UH8A1FN-37 ---

    [General Module Information]
    Module Number: 0
    Module Size: 512 MBytes
    Memory Type: DDR2-SDRAM
    Module Type: SO-DIMM
    Error Check/Correction: None
    Memory Speed: 266.7 MHz (PC2-4200)
    Module Manufacturer: Nanya Technology
    Module Part Number: NT512T64UH8A1FN-37
    Module Serial Number: 842753793
    Module Manufacturing Date: Year: 2006, Week: 26
    [Module Characteristics]
    Module Width: 64-bits
    Module Voltage: SSTL 1.8V
    SPD Revision: 1.2
    Number Of Ranks: 2
    Row Address Bits: 13
    Column Address Bits: 10
    Number Of Banks: 4
    [Module timing]
    Supported Burst Lengths: 4, 8
    Refresh Rate: Reduced 0.5x (7.8 us)
    Supported CAS Latencies (tCAS): 5.0, 4.0, 3.0
    Min. RAS-to-CAS Delay (tRCD): 15.00 ns
    Min. Row Precharge Time (tRP): 15.00 ns
    Min. RAS Pulse Width (tRAS): 45 ns
    Supported Module Timing at 266.7 MHz: 5.0-4-4-12
    Supported Module Timing at 266.7 MHz: 4.0-4-4-12
    Supported Module Timing at 200.0 MHz: 3.0-3-3-9
    Min. Row-Activate To Row-Activate Delay (tRRD): 10.00 ns
    Write Recovery Time (tWR): 15.00 ns
    Internal write to read command delay (tWTR): 7.50 ns
    Internal read to precharge command delay (tRTP): 7.50 ns
    Minimum Activate to Activate/Refresh Time (tRC): 60.00 ns
    Minimum Refresh to Activate/Refresh Command Period (tRFC): 105.00 ns
    Address and Command Setup Time Before Clock (tIS): 0.25 ns
    Address and Command Setup Time After Clock (tIH): 0.37 ns
    Data Input Setup Time Before Strobe (tDS): 0.10 ns
    Data Input Setup Time After Strobe (tDH): 0.22 ns

    Row: 1 - 512 MB PC2-4200 DDR2-SDRAM Nanya Technology NT512T64UH8A1FN-37 ---

    [General Module Information]
    Module Number: 1
    Module Size: 512 MBytes
    Memory Type: DDR2-SDRAM
    Module Type: SO-DIMM
    Error Check/Correction: None
    Memory Speed: 266.7 MHz (PC2-4200)
    Module Manufacturer: Nanya Technology
    Module Part Number: NT512T64UH8A1FN-37
    Module Serial Number: 825978157
    Module Manufacturing Date: Year: 2006, Week: 26
    [Module Characteristics]
    Module Width: 64-bits
    Module Voltage: SSTL 1.8V
    SPD Revision: 1.2
    Number Of Ranks: 2
    Row Address Bits: 13
    Column Address Bits: 10
    Number Of Banks: 4
    [Module timing]
    Supported Burst Lengths: 4, 8
    Refresh Rate: Reduced 0.5x (7.8 us)
    Supported CAS Latencies (tCAS): 5.0, 4.0, 3.0
    Min. RAS-to-CAS Delay (tRCD): 15.00 ns
    Min. Row Precharge Time (tRP): 15.00 ns
    Min. RAS Pulse Width (tRAS): 45 ns
    Supported Module Timing at 266.7 MHz: 5.0-4-4-12
    Supported Module Timing at 266.7 MHz: 4.0-4-4-12
    Supported Module Timing at 200.0 MHz: 3.0-3-3-9
    Min. Row-Activate To Row-Activate Delay (tRRD): 10.00 ns
    Write Recovery Time (tWR): 15.00 ns
    Internal write to read command delay (tWTR): 7.50 ns
    Internal read to precharge command delay (tRTP): 7.50 ns
    Minimum Activate to Activate/Refresh Time (tRC): 60.00 ns
    Minimum Refresh to Activate/Refresh Command Period (tRFC): 105.00 ns
    Address and Command Setup Time Before Clock (tIS): 0.25 ns
    Address and Command Setup Time After Clock (tIH): 0.37 ns
    Data Input Setup Time Before Strobe (tDS): 0.10 ns
    Data Input Setup Time After Strobe (tDH): 0.22 ns
  • Cikkszám
    NDDR2512NANYA
    Tömeg
    20 g/db
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