Micron MT8HTF12864AY-667E1 1GB DDR2-667 RAM modul DDR2-SDRAM PC2-5300U

Micron MT8HTF12864AY-667E1 1GB DDR2-667 RAM modul DDR2-SDRAM PC2-5300U

Row: 0 - 1 GB PC2-5300 DDR2-SDRAM Micron 8HTF12864AY-667E1 ---------------

[General Module Information]
Module Number: 0
Module Size: 1 GBytes
Memory Type: DDR2-SDRAM
Module Type: Regular Unbuffered (UDIMM)
Error Check/Correction: None
Memory Speed: 333.3 MHz (PC2-5300)
Module Manufacturer: Micron
Module Part Number: 8HTF12864AY-667E1
Module Serial Number: 1252331232
Module Manufacturing Date: Year: 2007, Week: 33
[Module Characteristics]
Module Width: 64-bits
Module Voltage: SSTL 1.8V
SPD Revision: 1.2
Number Of Ranks: 1
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 8
[Module timing]
Supported Burst Lengths: 4, 8
Refresh Rate: Reduced 0.5x (7.8 us)
Supported CAS Latencies (tCAS): 5.0, 4.0, 3.0
Min. RAS-to-CAS Delay (tRCD): 15.00 ns
Min. Row Precharge Time (tRP): 15.00 ns
Min. RAS Pulse Width (tRAS): 45 ns
Supported Module Timing at 333.3 MHz: 5.0-5-5-15
Supported Module Timing at 266.7 MHz: 4.0-4-4-12
Supported Module Timing at 200.0 MHz: 3.0-3-3-9
Min. Row-Activate To Row-Activate Delay (tRRD): 7.50 ns
Write Recovery Time (tWR): 15.00 ns
Internal write to read command delay (tWTR): 7.50 ns
Internal read to precharge command delay (tRTP): 7.50 ns
Minimum Activate to Activate/Refresh Time (tRC): 60.00 ns
Minimum Refresh to Activate/Refresh Command Period (tRFC): 127.50 ns
Address and Command Setup Time Before Clock (tIS): 0.20 ns
Address and Command Setup Time After Clock (tIH): 0.27 ns
Data Input Setup Time Before Strobe (tDS): 0.10 ns
Data Input Setup Time After Strobe (tDH): 0.17 ns