nanya 512MB DDR2 sodimm notebook RAM modul NT512T64UH8A1FN-37B 512MB 2Rx16 PC2-4200S-444-12-A2

nanya 512MB DDR2 sodimm notebook RAM modul NT512T64UH8A1FN-37B 512MB 2Rx16 PC2-4200S-444-12-A2

HWiNFO32 Version 5.80-3400

Memory --------------------------------------------------------------------

[General information]
Total Memory Size: 1 GByte
Total Memory Size [MB]: 1024
[Current Performance Settings]
Current Memory Clock: 159.6 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 4-4-4-12
Memory Runs At: Single-Channel
Command Rate: 1T
Write to Read Delay (tWR_RD) Same Rank (tWTR): 2T
Write to Precharge Delay (tWTP): 15T
Write Recovery Time (tWR): 4T
Row Cycle Time (tRC): 17T
Four Activate Window (tFAW): 10T

Row: 0 - 512 MB PC2-4200 DDR2-SDRAM Nanya Technology NT512T64UH8A1FN-37 ---

[General Module Information]
Module Number: 0
Module Size: 512 MBytes
Memory Type: DDR2-SDRAM
Module Type: SO-DIMM
Error Check/Correction: None
Memory Speed: 266.7 MHz (PC2-4200)
Module Manufacturer: Nanya Technology
Module Part Number: NT512T64UH8A1FN-37
Module Serial Number: 842753793
Module Manufacturing Date: Year: 2006, Week: 26
[Module Characteristics]
Module Width: 64-bits
Module Voltage: SSTL 1.8V
SPD Revision: 1.2
Number Of Ranks: 2
Row Address Bits: 13
Column Address Bits: 10
Number Of Banks: 4
[Module timing]
Supported Burst Lengths: 4, 8
Refresh Rate: Reduced 0.5x (7.8 us)
Supported CAS Latencies (tCAS): 5.0, 4.0, 3.0
Min. RAS-to-CAS Delay (tRCD): 15.00 ns
Min. Row Precharge Time (tRP): 15.00 ns
Min. RAS Pulse Width (tRAS): 45 ns
Supported Module Timing at 266.7 MHz: 5.0-4-4-12
Supported Module Timing at 266.7 MHz: 4.0-4-4-12
Supported Module Timing at 200.0 MHz: 3.0-3-3-9
Min. Row-Activate To Row-Activate Delay (tRRD): 10.00 ns
Write Recovery Time (tWR): 15.00 ns
Internal write to read command delay (tWTR): 7.50 ns
Internal read to precharge command delay (tRTP): 7.50 ns
Minimum Activate to Activate/Refresh Time (tRC): 60.00 ns
Minimum Refresh to Activate/Refresh Command Period (tRFC): 105.00 ns
Address and Command Setup Time Before Clock (tIS): 0.25 ns
Address and Command Setup Time After Clock (tIH): 0.37 ns
Data Input Setup Time Before Strobe (tDS): 0.10 ns
Data Input Setup Time After Strobe (tDH): 0.22 ns

Row: 1 - 512 MB PC2-4200 DDR2-SDRAM Nanya Technology NT512T64UH8A1FN-37 ---

[General Module Information]
Module Number: 1
Module Size: 512 MBytes
Memory Type: DDR2-SDRAM
Module Type: SO-DIMM
Error Check/Correction: None
Memory Speed: 266.7 MHz (PC2-4200)
Module Manufacturer: Nanya Technology
Module Part Number: NT512T64UH8A1FN-37
Module Serial Number: 825978157
Module Manufacturing Date: Year: 2006, Week: 26
[Module Characteristics]
Module Width: 64-bits
Module Voltage: SSTL 1.8V
SPD Revision: 1.2
Number Of Ranks: 2
Row Address Bits: 13
Column Address Bits: 10
Number Of Banks: 4
[Module timing]
Supported Burst Lengths: 4, 8
Refresh Rate: Reduced 0.5x (7.8 us)
Supported CAS Latencies (tCAS): 5.0, 4.0, 3.0
Min. RAS-to-CAS Delay (tRCD): 15.00 ns
Min. Row Precharge Time (tRP): 15.00 ns
Min. RAS Pulse Width (tRAS): 45 ns
Supported Module Timing at 266.7 MHz: 5.0-4-4-12
Supported Module Timing at 266.7 MHz: 4.0-4-4-12
Supported Module Timing at 200.0 MHz: 3.0-3-3-9
Min. Row-Activate To Row-Activate Delay (tRRD): 10.00 ns
Write Recovery Time (tWR): 15.00 ns
Internal write to read command delay (tWTR): 7.50 ns
Internal read to precharge command delay (tRTP): 7.50 ns
Minimum Activate to Activate/Refresh Time (tRC): 60.00 ns
Minimum Refresh to Activate/Refresh Command Period (tRFC): 105.00 ns
Address and Command Setup Time Before Clock (tIS): 0.25 ns
Address and Command Setup Time After Clock (tIH): 0.37 ns
Data Input Setup Time Before Strobe (tDS): 0.10 ns
Data Input Setup Time After Strobe (tDH): 0.22 ns